Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots
M. Ściesiek, J. Suffczyński, W. Pacuski, M. Parlińska-Wojtan, T. Smoleński, P. Kossacki A. Golnik
Physical Review B 93 (19), 195313, 2016
Cd(Se,Te) quantum dots (QDs) in a ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow, and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by the implementation of Mn-assisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3meV≤ΔEX−XX≤26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright excitons, and additionally the exciton fine-structure splitting δ1 and the Landé factor. The above results indicate that the values of the δ1 and of the Landé factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wave functions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe- and CdTe-rich QD regions.