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Moje publikacjeFirst observation of excited states in the 138I nucleus, Phys. Rev. C Vol. 75 5 (2007) 054319 publikacja The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer, Mat. Res. Soc. Symp. Proc Vol. 1068 (2008) C03-09 Channeling study of thermal decomposition of III-N compound semiconductors, Nucl. Instr. Meth. B Vol. 266 (2008) 1224 Nitrogen sublattice analysis in GaN by non-rutherford He-ion scattering, Nucl. Instr. Meth. B Vol. 266 (2008) 1897 Wpływ trawienia podłoży 4H-SiC na epitaksję GaN, Materiały Elektroniczne T. 36–2008 nr 4 (2008) 5-16 Compositional dependence of damage buildup in Ar-ion bombarded AlGaN, Vacuum 83 (2009) S145-S147 Structural analysis of Distributed Bragg Reflector mirrors, Vacuum 83 (2009) S148-S151 Structural characterization of GaN epitaxial layers grown on 4H-SiC substrates with different off-cut, Materials Science Forum Vols. 615-617 (2009) pp 939-942 Monte Carlo simulations of ion channeling in crystals containing extended defects, Nucl. Instr. Meth. B 268 (2010) 1718 Defect studies in ion irradiated AlGaN, Nucl. Instr. Meth. B 268 (2010) 2056 RBS/channeling and TEM study of damage buildup in ion bombarded GaN, Zgłoszono na 8th International Conference Ion Implantation and Other Applications of Ions and Electrons, Kazimierz Dolny (Polska) 2010 Stopping power and energy straggling of channeled He-ions in GaN, Zgłoszono na 8th International Conference Ion Implantation and Other Applications of Ions and Electrons, Kazimierz Dolny (Polska) 2010 On the mechanism of damage buildup in compound semiconductors, Zgłoszono na ...(Brazylia) 2010 |
Copyright © 2007 Karolina D. P±gowska