Życiorys Lista publikacji
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1996

  • 1. Dwilinski, R., Baranowski, J.M., Kaminska, M., Doradzinski, R., Garczynski, J. & Sierzputowski, L. Acta Physica Polonica A 90, 763-766 (1996).On GaN crystallization by ammonothermal method

  • 2. Korona, K.P., Wysmolek, A., Pakula, K., Stepniewski, R., Baranowski, J.M., Grzegory, I., Lucznik, B., Wroblewski, M. & Porowski, S. Applied Physics Letters 69, 788-790 (1996).Exciton region reflectance of homoepitaxial GaN layers

  • 3. Leszczynski, M., Grzegory, I., Teisseyre, H., Suski, T., Bockowski, M., Jun, J., Baranowski, J.M., Porowski, S. & Domagala, J. Journal Of Crystal Growth 169, 235-242 (1996).The microstructure of gallium nitride monocrystals grown at high pressure

  • 4. Leszczynski, M., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Palosz, B., Porowski, S., Pakula, K., Baranowski, J.M. & Barski, A. Acta Physica Polonica A 90, 887-890 (1996).Thermal expansion of GaN bulk crystals and homoepitaxial layers
  • 5. Leszczynski, M., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J.M., Foxon, C.T. & Cheng, T.S. Applied Physics Letters 69, 73-75 (1996).Lattice parameters of gallium nitride
  • 6. Pakula, K., Wysmolek, A., Korona, K.P., Baranowski, J.M., Stepniewski, R., Grzegory, I., Bockowski, M., Jun, J., Krukowski, S., Wroblewski, M. & Porowski, S. Solid State Communications 97, 919-922 (1996).Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
  • 7. Sliwinski, A.A., Korona, K.P., Pakula, K. & Baranowski, J.M. Acta Physica Polonica A 90, 955-958 (1996).Deep level transient spectroscopic studies of MOCVD GaN layers grown on sapphire
  • 8. Tomaszewicz, T., Korona, K.P., Bozek, R. & Baranowski, J.M. Acta Physica Polonica A 90, 965-968 (1996).Photoreflectance measurements of InGaAs/GaAs quantum wells
  • 9. Wysmolek, A., Lomiak, P., Baranowski, J.M., Pakula, K., Stepniewski, R., Korona, K.P., Grzegory, I., Bockowski, M. & Porowski, S. Acta Physica Polonica A 90, 981-984 (1996).Coupling of LO phonons to excitons in GaN

1997

  • 10. Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L., Baranowski, J.M. & Kaminska, M. Materials Science And Engineering B-Solid State Materials For Advanced Technology 50, 46-49 (1997).Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method
  • 11. Dwilinski, R., Baranowski, J.M., Kaminska, M., Doradzinski, R., Garczynski, J., Sierzputowski, L. & Palczewska, M. Acta Physica Polonica A 92, 737-741 (1997).Some optical and EPR properties of strain-free GaN crystals obtained by AMMONO method
  • 12. Fiorek, A., Baranowski, J.M., Wysmolek, A., Pakula, K., Wojdak, M., Grzegory, I. & Porowski, S. Acta Physica Polonica A 92, 742-744 (1997).Two-electron transition in homoepitaxial GaN layers
  • 13. Korona, K.P., Baranowski, J.M., Pakula, K., Monemar, B., Bergman, J.P., Grzegory, I. & Porowski, S. Acta Physica Polonica A 92, 841-844 (1997).Luminescence dynamics of exciton replicas in homoepitaxial GaN layers
  • 14. Korona, K.P., Stepniewski, R. & Baranowski, J.M. Acta Physica Polonica A 92, 867-870 (1997).Dielectric function theory calculations of polaritons in GaN
  • 15. Korona, K.P., Bergman, J.P., Monemar, B., Baranowski, J.M., Pakula, K., Grzegory, I. & Porowski, S. Defects In Semiconductors - Icds-19, Pts 1-3 258-2, 1125-1130 (1997).Photoluminescence dynamics in the near bandgap region of homoepitaxial GaN layers
  • 16. LilientalWeber, Z., Washburn, J., Pakula, K. & Baranowski, J. Microscopy And Microanalysis 3, 436-442 (1997).Convergent beam electron diffraction and transmission electron microscopy study of interfacial defects in gallium nitride homoepitaxial films
  • 17. Monemar, B., Bergman, J.P., Ivanov, I.G., Baranowski, J.M., Pakula, K., Grzegory, I. & Porowski, S. Solid State Communications 104, 205-209 (1997).Exciton dynamics in homoepitaxial GaN
  • 18. Porowski, S., Bockowski, M., Lucznik, B., Grzegory, I., Wroblewski, M., Teisseyre, H., Leszczynski, M., LitwinStaszewska, E., Suski, T., Trautman, P., Pakula, K. & Baranowski, J. Acta Physica Polonica A 92, 958-962 (1997).High resistivity GaN single crystalline substrates
  • 19. Saarinen, K., Laine, T., Kuisma, S., Nissila, J., Hautojarvi, P., Dobrzynski, L., Baranowski, J.M., Pakula, K., Stepniewski, R., Wojdak, M., Wysmolek, A., Suski, T., Leszczynski, M., Grzegory, I. & Porowski, S. Physical Review Letters 79, 3030-3033 (1997).Observation of native Ga vacancies in GaN by positron annihilation
  • 20. Stepniewski, R., Korona, K.P., Wysmolek, A., Baranowski, J.M., Pakula, K., Potemski, M., Martinez, G., Grzegory, I. & Porowski, S. Physical Review B-Condensed Matter 56, 15151-15156 (1997).Polariton effects in reflectance and emission spectra of homoepitaxial GaN
  • 21. Suchanek, B., Palczewska, M., Pakula, K., Baranowski, J. & Kaminska, M. Acta Physica Polonica A 92, 1001-1004 (1997).Electrical and ESR studies of GaN layers grown by metal organic chemical vapour deposition
  • 22. Suffczynski, M., Stepniewski, R. & Baranowski, J.M. Acta Physica Polonica A 92, 993-996 (1997).Exciton in 2D cubic inclusion in hexagonal GaN
  • 23. Wojdak, M., Baranowski, J.M., Suchanek, B., Pakula, K., Jun, J. & Suski, T. Acta Physica Polonica A 92, 1059-1062 (1997).Optical and electrical properties of high temperature annealed heteroepitaxial GaN:Mg layers

1998

  • 24. Babinski, A., Wysmolek, A., Tomaszewicz, T., Baranowski, J.M., Leon, R., Lobo, C. & Jagadish, C. Applied Physics Letters 73, 2811-2813 (1998).Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots
  • 25. Buyanova, I.A., Bergman, J.P., Monemar, B., Amano, H., Akasaki, I., Wysmolek, A., Lomiak, P., Baranowski, J.M., Pakula, K., Stepniewski, R., Korona, K.P., Grzegory, I., Bockowski, M. & Porowski, S. Solid State Communications 105, 497-501 (1998).Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN
  • 26. Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L., Baranowski, J.M. & Kaminska, M. Diamond And Related Materials 7, 1348-1350 (1998).AMMONO method of GaN and AlN production
  • 27. Korona, K.P., Pakula, K., Wysmolek, A., Baranowski, J.M., Bergman, J.P., Monemar, B., Lukasiewicz, T. & Luczynski, Z. Mat.Res.Soc. 482, 725(1998).Luminescence of a New Material: GaN Grown on NdGaO3
  • 28. Korona, K.P., Wysmolek, A., Baranowski, J.M., Pakula, K., Bergman, J.P., Monemar, B., Grzegory, I. & Porowski, S. Mat.Res.Soc. 482, 501(1998).Interaction of LO Phonons with Bound Excitons in Homoepitaxial GaN
  • 29. Liu, Z.X., Korona, K.P., Syassen, K., Kuhl, J., Pakula, K., Baranowski, J.M., Grzegory, I. & Porowski, S. Solid State Communications 108, 433-438 (1998).Effect of pressure on exciton energies of homoepitaxial GaN
  • 30. Monemar, B., Bergman, J.P., Ivanov, I.G., Baranowski, J.M., Pakula, K., Grzegory, I. & Porowski, S. Silicon Carbide, Iii-Nitrides And Related Materials, Pts 1 And 2 264-2, 1275-1278 (1998).Exciton dynamics in homoepitaxial GaN
  • 31. Pakula, K., Baranowski, J.M., Leszczynski, M., Suchanek, B. & Wojdak, M. Mrs Internet Journal Of Nitride Semiconductor Research 3, 1-5 (1998).High quality GaN films - growth and properties
  • 32. Pakula, K., Wojdak, M., Palczewska, M., Suchanek, B. & Baranowski, J.M. Mrs Internet Journal Of Nitride Semiconductor Research 3, 1-5 (1998).Luminescence and ESR spectra of GaN : Si below and above Mott transition
  • 33. Stepniewski, R., Wysmolek, A., Potemski, M., Lusakowski, J., Korona, K., Pakula, K., Baranowski, J.M., Martinez, G., Wyder, P., Grzegory, I. & Porowski, S. Physica Status Solidi B. 210, 373(1998).Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetics Field
  • 34. Trautman, P., Baj, M. & Baranowski, J.M. High Pressure In Semiconductor Physics I 54, 427-455 (1998).Hydrostatic pressure and uniaxial stress in investigations of the EL2 defect in GaAs
  • 35. Witowski, A.M., Sadowski, M.L., Pakula, K., Suchanek, B., Stepniewski, R., Baranowski, J.M., Potemski, M., Martinez, G. & Wyder, P. Mrs Internet Journal Of Nitride Semiconductor Research 3, 1-5 (1998).Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

1999

  • 36. Manasreh, M.O., Baranowski, J.M., Jiang, H.X. & Lin Jingyu, Appl. Phys. Lett. 75, 659(1999).Localized Vibrational Modes of Carbon-Hydrogen Complexes in GaN
  • 37. Stepniewski, R., Potemski, M., Wysmolek, A., Pakula, K., Baranowski, J.M., Lusakowski, J., Grzegory, I. & Porowski, S., Martinez, G., Wyder, P., Physical Review B. 7, 4438 (1999).Symmetry of excitons in GaN
  • 38. Tomaszewicz, T., Babiński, A., Suska, D., Baranowski, J.M., Applied Physics Letters 75, 2088 (1999).Electroreflectance bias-wavelength mapping of the modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
  • 39. Wysmolek, A., Potemski, M., Stepniewski, R., Lusakowski, J., Pakula, K., Baranowski, J.M., Martinez, G., Wyder, P., Gregory, I, Porowski, S, Phys. Stat. Solidi (b) 216, 11 (1999).Homoepitaxial GaN Layers
  • 40. Korona, K.P., Kuhl, J., Baranowski, Phys. Stat. Solidi (b) 215, 53 (1999).Temporally and spatially resolved spectroscopy of GaN


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