2007
104. A. Wysmołek
Magnetized Plasmain Polar Semiconductors
Acta Phys. Polon. A 112, 141 (2007)
103. A. Wysmołek, R. Stępniewski, M. Potemski
Magneto-spectroscopy of donor-bound excitons in GaN
Physica B 401–402, 441 (2007)
101. J. Suffczyński, A. Trajnerowicz, T.Kazimierczuk,
B. Piętka, K. Kowalik, P. Kossacki, A. Golnik, M. Nawrocki, J. Gaj, A.
Wysmołek, R. Stępniewski, M. Potemski, V. Thierry-Mieg
„Control of Photon Polarization in GaAs / AlAs
Single Quantum Dot Emission”
Acta Phys. Polon. A 112, 461 (2007)
100. A. Niedzwiadek, A. Wysmolek, D. Wasik, M.
Potemski, J. Szczytko, M. Kaminnska,
A. Twardowski, B. Lucznik, B. Pastuszka and I.
Grzegory
Magnetoluminescence Studies of GaN:Fe
Acta Physica Polonica A 112, 177 (2007)
99. Magneto-optical studies of iron impurity in
HVPE GaN
A. Niedzwiadek, A. Wysmolek, D. Wasik, J. Szczytko,
M. Kaminska, A. Twardowski,
M.L. Sadowski, M. Potemski, B. Clerjaud, B.
Pastuszka, B. Łucznik, I. Grzegory
Physica B 401–402, 458–461 (2007)
98. Magnetopolaron effect on silicon and oxygen
donors in GaN
A. Wysmolek, R. Stępniewski, M. Potemski, B.
Chwalisz-Piętka, K. Pakuła, J. M. Baronowski, D. C. Look; S. S. Park; K. Y. Lee
International Journal of Modern Physics B (IJMPB) 21,
1486 2007
97. Direct bandgap quantum dots embedded in a type-II
GaAs/AlAs double quantum well structure
B. Chwalisz-Piętka, A. Wysmołek, R. Stępniewski, M.
Potemski, S. Raymond, R. Bożek,V. Thierry-Mieg
International
Journal of Modern Physics B (IJMPB) 21, 1654 (2007)
2006
95. A. Wysmołek, D. Plantier,
M. Potemski, T. Słupiński, and Z. R. Żytkiewicz
„Coupled plasmon–LO-phonon
modes at high-magnetic fields”
Phys. Rev. B 74, 165206
(2006)
94. A. Wysmołek,
R. Stępniewski, M. Potemski, B. Chwalisz-Piętka, K. Pakuła,
J.M. Baranowski, D.C. Look, S.S. Park, and K.Y. Lee
” Magnetopolaron effect on shallow donors in GaN”
Phys. Rev. B 74, 195205 (2006)
93. A. Wysmołek, K. Wardak,
R. Stępniewski, J. Baranowski, M. Potemski, E. Tymicki,
K. Grasza
” Magneto-luminescence study of silicon-vacancy in 6H-SiC”
Acta Physica Polonica A 110, 437-442 (2006)
92. K. Pakuła,
R. Bożek, K. Surowiecka, R. Stępniewski, A. Wysmolek, and
J.M. Baranowski
”Low density GaN quantum dots on AlGaN”
phys. stat. sol. (b) 243, 1486–1489 (2006)
91. K. Pakuła,
R. Bożek, K. Surowiecka, R. Stępniewski, A. Wysmołek,
J.M. Baranowski
”Growth of low-density GaN quantum dots on AlxGa1-xN”
Journal of Crystal Growth 289, 472 (2006)
90. Z. Lipińska, M.
Pawłowski, H. Żołnierowicz, A. Wysmołek, M. Palczewska, M. Kamińska, A.
Twardowski, M. Boćkowski, I. Grzegory
„Photoluminescence and
electron paramagnetic resonance studies of bulk gan doped with gadolinium”
Acta Phys. Polonica A 110,
243 (2006)
89. K. Korona, A.Wysmołek, M.
Kamińska, A. Twardowski, M. Piersa, M. Palczewska, G. Strzelecka, A. Hruban, J.
Kuhl, R. Adomavicius, A. Krotkus
“Manganese as a fast charge
carrier trapping center in InP"
Physica B 382, 220 (2006)
2005
88.
M. Jaworek. A. Wysmołek, M. Kamińska, T. Twardowski,
M.
Boćkowski and I. Grzegory,
„Photolumienescence
study of bulk GaN doped with beryllium”
Acta Phys. Polonica A 108, 705 (2005)
87.
K. Surowiecka, A. Wysmolek, R. Stępniewski, R. Bożek, K. Pakula, J. M.
Baranowski
„Temporal evolution of Multi-Carrier Complexes
in Single GaN/AlGaN Quantum Dots”
Acta Phys. Polonica A 108, 879 (2005)
86.
A. Lesiak, B. Chwalisz, A. Wysmołek, M. Potemski, R. Stępniewski, V.
Thierry-Mieg
„Carriers diffusion in GaAs/AlAs type II
Quantum Well”
Acta Phys. Polonica A 108, 755 (2005)
85. B. Chwalisz, A. Wysmołek, K.
Korona, R. Stępniewski, C. Skierbiszewski
“Anomalous behaviour of the photoluminescence
from GaN / AlGaN quantum wells”
physica status solidi (c) 2, 1010
(2005)
84. K.P. Korona, A. Wysmolek, R.
Stepniewski, J. Kuhl, D.C. Look, S.K. Lee and
J.Y. Han, "Dynamics of Ground and Excited States of
Bound Excitons in
Gallium Nitride",
J. Lumin. 112,
30 (2005)
83. K. P. Korona, B. Chwalisz, A. Wysmołek, R. Stępniewski, K. Pakuła, J. M. Baranowski, J.Kuhl
“Recombination dynamics in GaN/AlGaN low
dimensional structures obtained by SiH4 treatment”
physica status solidi (c) 2, 1069
(2005)
2004
82. B. Chwalisz, A. Wysmolek, M. Potemski, R. Stępniewski, A.
Babinski, and V. Thierry-Mieg
“Magneto-luminescence of a single lateral
island formed in the type - II GaAs/AlAs QW”
International Journal
of Modern Physics B 18, 3807 (2004)
81. A. Wolos, A. Wysmolek, M.
Kaminska, A. Twardowski, M. Bockowski,
I. Grzegory, S. Porowski, M. Potemski
„Neutral Mn acceptor in bulk GaN in high magnetic
fields”
Phys. Rev. B 70,
245202 (2004)
80. A. Wysmolek, B. Chwalisz, M. Potemski, R.
Stępniewski, A. Babinski, S. Raymond, and
V. Thierry-Mieg,
“Emission from mesoscopic-size islands formed
in a GaAs/AlAs double layer structure”
Acta.
Phys. Polonica A 106, 367 (2004)
79. A.
Mycielski, A Szadkowski, L Kowalczyk, B. Witkowska, W. Kaliszek, B. Chwalisz,
A.
Wysmołek, R. Stępniewski, J. Baranowski, M. Potemski, A. Witowski, R Jakieła, A
Barcz, P. Aleshkevych, M. Jouanne, W. Szuszkiewicz, A. Suchocki, E. Łusakowska,
E Kamińska, W. Dobrowolski
“ZnO and
ZnO:Mn crystals obtained with the chemical vapour
transport method “
Phys. Stat.
Sol. C 1,884 (2004)
78. A. Suchocki, S. Biernacki, G. Boulon, A. Brenier , M. Potemski, A. Wysmołek
„Enhanced Zeeman effect in GGG:Mn44+,Ca
crystals”
Chemical Physics, 298, 267 (2004)
77.
A. Wysmolek, K. P. Korona, R. Stępniewski,
J. M. Baranowski, J. Błoniarz, M. Potemski,
R. L. Jones, D. C. Look, J. Kuhl,
S. S. Park, and S. K. Lee
Replay
to „Comment on ‘Recombination of Excitons Bound to Oxygen and Silicon Donors in
Freestanding GaN’ ”
Phys.
Rev. B 69, 157302 (2004)
76. B. Chwalisz, A. Wysmołek, R. Stępniewski,
M.Potemski, W. Knap, J.M. Baranowski, N. Grandjean, J. Massies, P. Prystawko,
I. Grzegorz
„Optical detection of 2DEG in GaN/AlGaN Structures – High Magnetic Field
Studies”
phys. stat. sol. (c) 1, 193-197 (2004)
75. R. Stępniewski, A. Wysmołek, and M. Potemski
„Electronic structure of shallow impurities in GaN studied via bound exciton
magnetooptics”
phys. stat. sol. (a), 201, No. 2, 181–189 (2004).
74. A. Mycielski, L.
Kowalczyk, A. Szadkowski, B. Chwalisz, A. Wysmołek, R. Stępniewski, J.M. Baranowski, M. Potemski,
A. Witowski, R. Jakieła, A.Barcz,
B. Witkowska, W. Kaliszek, A.Jędrzejczak, A. Suchocki,
E. Łusakowska,E. Kamińska
„The Chemical Vapour Transport Growth of ZnO
Single
Journal
of Alloys and Compounds 371,
150 (2004)
2003
73.
R. Stepniewski, A. Wysmolek , M. Potemski , M. Pakula,
J.M. Baranowski, I. Grzegory, S. Porowski, P. Martinez, P. Wyder
„Fine
structure of effective mass acceptors in gallium nitride”
Physical Review
Letters, 91, 226404-1 (2003)
72. Macieja B., Korona K. P., Piersa M, Witowski A.M,
Wasik D, Wysmolek A, Strzelecka G, Hruban A, Surma B, Palczewska M, Kaminska M,
Twardowski A.
„Formation of Mn-related defect band in
InP.”
Acta Physica Polonica A 103, 637 (2003),
71. B . Chwalisz, A. Wysmolek , R. Bozek, K.P. Korona, R. Stepniewski, W. Knap,
K. Pakula, J.M. Baranowski, N. Grandjean, J. Massies, P.
Prystawko , I. Grzegory
„Localization effects in GaN/AlGaN quantum
well - photoluminescence studies”
Acta
Physica Polonica A, 103, 573 (2003)
70. A. Wysmolek
„Selective magneto-luminescence spectroscopy of donor-acceptor pairs in
n-GaAs”
phys. stat. solidi (b) 235, 48 (2003)
69. A.Wysmolek, M.Potemski, R.Stepniewski, J.M.Baranowski, D.C.Look, S. K. Lee, and J.Y. Han
„Resonant interaction of LO phonons with excited donor states in GaN”
phys. stat. solidi (b) 235, 36 (2003)
68. K. P. Korona, A.
Wysmołek, R. Stępniewski, M. Potemski, J. Kuhl, J. M. Baranowski, G. Martinez,
I. Grzegory, S. Porowski
„Dynamics
of Trapping on Donors and Relaxation of the B-Exciton in GaN”
phys. stat. solidi (b) 235, 31 (2003)
67. K. Thonke, N. Kerwien, A.
Wysmolek, M. Potemski, A. Waag, and R. Sauer
„Magneto-PL
study of donors in ZnO substrates”
Proc. 26th Conf. Phys.
Semicond., Edinburgh 2002, P221-P227, IOP Publishing
2002
66.
A. Wysmolek, K. P. Korona, R. Stępniewski,
J. M. Baranowski, J. Błoniarz, M. Potemski,
R. L. Jones, D. C. Look, J. Kuhl,
S. S. Park, and S. K. Lee
„Recombination
of Excitons Bound to Oxygen and Silicon Donors in Freestanding GaN”
Phys.
Rev. B 66, 245317 (2002)
65.
A. Wysmołek, M. Potemski, V. Thierry-Mieg
Single-dot-like
emission induced by high magnetic fields
Physica
E, 12 876 9 (2002)
64.
R. Stępniewski, A. Wysmołek, K.P. Korona, and J.M. Baranowski
"Optical
Properties of Homoepitaxial GaN"
Chapter
in III-Nitride Semiconductors: Optical Properties, ed. Omar
Manasreh
and H.X. Jiang, p 197-248
(Optoelectronic
Properties of Semiconductors and Superlattices vol. 13,
Taylor
& Francis Books, Inc., New York London, 2002)
2001
63.
M.Wojdak, J.M.Baranowski , A. Wysmolek, K.Pakula, R.Stepniewski, M. Potemski, I.Grzegory S.Porowski,
„Magneto-spectroscopy
of two-electron transitions in homoepitaxial GaN”
in GaN and related compounds,
edited by J.E. Northup, et al. ,
Matter. Res. Soc. Symp. Proc. No. 693 (Materials
Research Society,
62.
R. Stepniewski, A. Wysmolek, and M. Potemski
Invited talk: „GaN electronic
structure and luminescence mechanisms from magnetooptics in high magnetic
fields”
Proc.
of the 25-th International Conference on the Physics of Semiconductors, Osaka
2000,
ed. by N. Miura
and T. Ando, Springer Poceedings in Physics 87, p 1513 (2001)
61.
A.Wysmolek M. Potemski , and T. Slupinski
„Inelastic
Light Scattering on Coupled Plasmon-LO Phonon Modes in High Magnetic Fields”
Proc.
The 14th International Conference on High Magnetic Fields in
Semiconductor Physics,
Matsue
2000
Physica B 298, 216 (2001)
60.
A.Wysmolek, M. Potemski, and T. Slupinski
Proc.
of the 25-th International Conference on the Physics of Semiconductors, Osaka
2000, ed. by N.
Miura and T. Ando, Springer Poceedings in Physics 87, p 87 (2001)
59. A.Wysmolek, M. Potemski, R. Stepniewski
„Selective
magneto-luminescence spectroscopy of shallow donors in n-GaAs”
Proc.
of the 25-th International Conference on the Physics of Semiconductors, Osaka
2000,
ed. by N. Miura and T. Ando, Springer Poceedings in Physics 87, p 1393 (2001)
58.
C. Q. Chen, R. Helbig, R. Winkler, A. Wysmolek, M. Potemski
„Zeeman
effect of D1 bound exciton in 4H-SiC”
Proc. of The Third European Conference on
Silicon Carbide and Related Materials ECSCRM 2000
Materials Science Forum
Vols. 353-356, 361 (2001)
57.
E. Montoya, L. Viña, A. Wysmolek, M. Potemski
and L. E. Bausá,
Modulation
of the Yb+3 to Er+3 Energy Transfer in LiNbO3
Crystals by Applying Magnetic Field, Journal of Alloys and Compounds, 323-324, 344 (2001)
2000
56. A. Wysmolek, M. Potemski, R.
Stepniewski, K. Pakula, J. M. Baranowski , G. Martinez, P.Wyder,
„Ground
and Excited Excitonic Resonances in Heteroepitaxial GaN Layers: A
Magnetooptical Study”
Proc. of
IWN2000,
IPAP Conference Series 1, 583 (2000)
55. A.Wysmolek, V. F. Sapega, T. Ruf, M.
Cardona, M. Potemski, P. Wyder, R. Stepniewski,
K. Pakula, J. M. Baranowski, I. Grzegory, S. Porowski,
„Magneto-Spectroscopy
of Donor-Bound Excitons in Homoepitaxial GaN”
Proc. of
IWN2000, IPAP
Conference Series 1, 579 (2000)
54. J. Baranowski and A. Wysmolek
Invited talk: „Homoepitaxy of GaN - growth, investigations and applications”
Proc. of the 3rd International EuroConference on Advanced Semiconductor Devices And
Microsystems,
1999
53.
A.Babiński , T.Tomaszewicz, A.Wysmołek,
J.M.Baranowski, C.Lobo, R.Leon, and C.Jagadish,
"Optical properties of self-organized InGaAs/GaAs quantum dots in field
effect structures"
Microcrystalline and Nanocrystalline Semiconductors - 1998. Mater. Res. Soc.
Proc. 536, pp.269-74. Warrendale,
PA, USA.
52. J. Serrano, A. Wysmolek, T. Ruf, and M.
Cardona
“Spin-orbit spitting of acceptor states in Si
and C”
Proc.
of the 20th Int. Conf. on Defects in Semiconductors,
Berkeley, (1999)
Physica
B 273-641, 640 (1999)
51. A. Wysmolek, M. Potemski, R. Stepniewski,
K. Pakula, J.M.Baranowski, J. Lusakowski, I. Grzegory, S. Porowski,
G. Martinez, and P. Wyder
“Polarised Magnetoluminescence of Excitons in
Homoepitaxial GaN Layers”
Proceedings
of the ICNS3, Montpellier, (1999)
phys. stat. sol. (b) 216 11 (1999)
50. M. Wojdak, A. Wysmolek, K. Pakula, and M.
Baranowski
“Emission Due to Exciton Scattering by
LO-Phonons in Gallium Nitride”
Proceedings
of the ICNS3, Montpellier, (1999)
phys. stat. sol. (b) 216 95 (1999)
49. Stepniewski, M. Potemski, A. Wysmolek, K.
Pakula, J.M.Baranowski, J. Lusakowski, I. Grzegory, S. Porowski, G.
Martinez, and P. Wyder
“Symmetry of Exciton in Gallium Nitride”
Phys. Rev. B
60, 4438 (1999)
1998
48. R. Stepniewski , A. Wysmolek, M. Potemski,
J. Lusakowski, K. Korona, K. Pakula, J.
M. Baranowski, G. Martinez, P. Wyder,
Invited talk: "Impurity related
luminescence of homoepitaxial GaN studied with high
magnetic fields"
Proceedings of 8th SLCS, Montpellier 98,
phys. stat. sol. (b) 210 373 (1998)
47. R. Dwilinski, R. Doradzinski, J.
Garczynski, L. Sierzputowski, M. Palczewska, Andrzej
Wysmolek , M. Kaminska
"AMMONO method of BN,
AlN and GaN synthesis and crystal growth."
MRS Internet J. Nitride
Semicond. Res. 3, 25(1998).
46. A.Babinski, A.Wysmolek, T.Tomaszewicz,
J.M.Baranowski, R.Leon, C.Lobo,
C.Jagadish,
"Electrically modulated photoluminescence
in self-organized InGaAs/GaAs quantum dots"
Appl. Phys. Lett 73, 2811 (1998)
45. R.Leon, C.Lobo, A. Clark, R. Bozek, A.
Wysmolek, A. Kurpiewski, and M. Kaminska
"Different paths to tunability in III-V
quantum dots"
J. Appl. Phys. 84, 248 (1998)
44. K. P. Korona, K. Pakula, A. Wysmolek, J. M.
Baranowski, J.P. Bergman, B. Monemar,
T. Lukasiewicz, Z. Luczynski,
"Luminescence of a New Material: GaN Grown
on NdGaO3"
Proceedings of Materials Research Society Fall
Meeting,
482, 725 (1998)
43. K.P. Korona, A. Wysmolek, J.M. Baranowski,
K. Pakula, I. Grzegory, S. Porowski
"Interactions of LO phonons with Bound
Excitons in Homoepitaxial GaN"
Proceedings of Materials Research Society Fall
Meeting,
482, 501 (1998)
42. K. Saarinen, T. Laine, S. Kuisma, J.
Nissila, P. Hautojarvi, L. Dobrzynski, J. M.
Baranowski, K. Pakula, R. Stepniewski, M.
Wojdak, A. Wysmolek, T. Suski, M.
Leszczynski,
"Observation of native Ga vacancies in GaN
by positron annihilation"
Proceedings of Materials Research Society Fall
Meeting,
Mat.
Res. Soc. 482, 757 (1998)
41. I. A. Buyanova, J.P. Bergmann, B. Monemar,
H. Amano, I. Akasaki, A. Wysmolek, P.
Lomiak, J.M. Baranowski, K. Pakula, R.
Stepniewski, K.P. Korona,
Bockowski and S. Porowski,
"Efects of defect scattering on the
photoluminescence of exciton-polaritons in n-GaN"
1997
40. J.M. Baranowski, Z. Liliental-Weber, K.
Korona, K. Pakula, R. Stepniewski,
A.Wysmolek,
Invited talk: "Structural and Optical
Properties of Homoepitaxial GaN Layers", Materials
Research Society Symposium Proceedings, Vol.
449, pp. 393-398, ed. F. A. Ponce, T.D.
Moustakas,
39. A. Fiorek, J.M. Baranowski, A. Wysmolek, K.
Pakula, M. Wojdak,
Porowski
"Two electron transition in homoepitaxial
GaN layers"
Proc. of the
Jaszowiec 1997
Acta Phys. Polonica A92, 742-745 (1997)
38. K. Saarinen, T. Laine, S. Kuisma, J.
Nissila, P. Hautojarvi, L. Dobrzynski, J. M.
Baranowski, K. Pakula, R. Stepniewski, M.
Wojdak, A. Wysmolek, T. Suski, M.
Leszczynski,
"Observation of native Ga vacancies in GaN
by positron annihilation"
Phys. Rev. Lett. 79, 3030-3033 (1997)
37. R. Stepniewski, K.P. Korona, A. Wysmolek,
J.M. Baranowski, K. Pakula, M.
Potemski, G. Martinez,
"Polariton Effects in Reflectance and
Emission Spectra of Homoepitaxial GaN"
Phys. Rev. B. 56, 15151-15156 (1997)
1996
36. K. Pakula, A. Wysmolek , K.P. Korona, J.M.
Baranowski, R. Stepniewski, I. Grzegory,
M. Boækowski, J. Jun, S. Krukowski, M.
Wróblewski, and S. Porowski,
"Growth of GaN MOCVD Layers on GaN single
NATO ASI Series 3: High Technology, Kluwer
Academic Publishers 1996, Vol. 11, pp.
33-36,
35. A.Wysmolek, J.M. Baranowski, K. Pakula, K.
Korona,
Porowski
"Donor - Acceptor Pair Spectra in p-type
Homoepitaxial GaN Layers"
Proc.;Int. Symp.on Blue Laser and Light Emiting Diodes,
Yoshikawa, K. Kisino, M. Kobayashi, T. Yasuda,
Ohsmsha Ltd. 1996, pp. 492-495
34. S. Porowski, J.M.
Baranowski, M. Leszczynski, J. Jun, M. Bockowski,
Krukowski, M. Wróblewski, B. £ucznik, G.
Nowak, K. Pakula, A. Wysmolek , K. P.
Korona, R. Stepniewski
"Physical Properties of GaN Single
Crystalline Substrates and Homoepitaxial Layers"
Proc. Int. Symp. on
Blue Laser and Light Emiting Diodes,
1996, Ed. A. Yoshikawa, K.
Kisino, M. Kobayashi, T. Yasuda, Ohsmsha Ltd. 1996, pp.
38-41
33. M. Godlewski, A. Wysmolek
, K. Pakula, J.M. Baranowski,
Porowski, J.P. Bergman, and B. Monemar,
"Exciton dynamics in Mg doped GaN grown by
MOCVD on GaN substrate"
Proc. Int. Symp. on
Blue Laser and Light Emiting Diodes,
Yoshikawa, K. Kisino, M. Kobayashi, T. Yasuda,
Ohsmsha Ltd. 1996, pp. 356-359
32. T. Suski, P. Perlin, P. M. Leszczynski, H.
Teisseyre, I. Grzegory, J. Jun, M. Bockowski,
S. Porowski, K. Pakula, A. Wysmolek, J. Baranowski
"Growth and properties of bulk single
crystals of GaN"
Galium Nitride and Related
Materials. First International
Symposium. Ed. F.A. Ponce,
R.D. Dupuis, S. Nakamura, J.A. Edmond, pp.
15-25, 1996
31. R. Stepniewski and A. Wysmolek
Invited talk: "Shallow donors and
acceptors in GaN; bound excitons and pair spectra",
Proc. of the
Jaszowiec 1996, Acta Physica Polonica 90,
681-690 (1996)
30. A. Wysmolek , P. Lomiak, J.M. Baranowski,
K. Pakula, R. Stepniewski , K.P. Korona,
I. Grzegory, M. Bockowski and S. Porowski
" Coupling of LO Phonons to Excitons in GaN"
Proc. of the
Jaszowiec 1996, Acta Physica Polonica 90, 981-984
(1996)
29. A. Wysmolek, J. M. Baranowski, M. Kaminska,
"Origin of Centres Involved in
Proc. of the 23-rd International Conference on
the Physics of Semiconductors,
1996, ed. by M. Sheffler and R. Zimmermann,
World Scientific Singapore1996, str.
2673-2676.
28. R. Stepniewski, A. Wysmolek, K. Pakula, J.
M. Baranowski, M. Potemski, G.
"Magnetooptics of excitons in
homoepitaxial GaN layers"
Proc. of the 23-rd International Conference on
the Physics of Semiconductors,
1996, ed. by M. Sheffler and
R. Zimmermann, World Scientific Singapore1996, pp.
549-552.
27. A. Wysmolek , K. P. Korona, K. Pakula, J.
M. Baranowski, R. Stepniewski, I.
Grzegory, M. Wróblewski, S. Porowski,
" Luminescence related to Mg-acceptor in p-type homoepitaxial GaN layers"
Proc. of the 23-rd International Conference on
the Physics of Semiconductors,
1996, Ed. by M. Sheffler and
R. Zimmermann, World Scientific Singapore1996, pp.
2925-2928.
26. K. Pakula, A. Wysmolek, K.P. Korona, J.M.
Baranowski, R. Stepniewski, I. Grzegory,
M. Bockowski, J. Jun,
"Luminescence and Reflection in the
Exciton Region of Homoepitaxial GaN Layers Grown
on GaN Substrates "
Solid State Comm. 97, 919-922 (1996)
25. K.P. Korona, A. Wysmolek , K. Pakula, R.
Stepniewski, J.M. Baranowski, I.Grzegory,
B. Lucznik, M. Wroblewski, S. Porowski,
"Exciton region reflectance of
homoepitaxial GaN layers"
Appl. Phys. Lett. 69, 788, (1996)
1995
24. A. Babinski, A. Wysmolek
Orientation of the metastable EL2 under
uniaxial stress
Proc. of the
Jaszowiec 1994
Acta. Phys. Pol. A. 87, 137-140 (1995)
23. A. Wysmolek , P. Mrozinski,
R. Dwilinski,
Competition of radiation processes in 6H-SiC
observed by luminescence
Proc. of the
Jaszowiec 1995
Acta Phys. Pol. A 87, 437-440 (1995).
22. A. Wysmolek and J. Lusakowski
Influence of impact ionization of shallow
donors on luminescence in GaAs
Proc. of the
Jaszowiec 1995
Acta Phys. Pol. A 87, 261-264 (1995).
21. R. Dwilinski, A.Wysmolek, J. Baranowski, M.
Kaminska, R. Doradzinski, J.
Garczynski, L. Sierzputowski, H. Jacobs,
GaN sythesis by Ammonothermal Method
Proc. of the
Jaszowiec 1995
Acta Phys. Pol. A 88, 833-836 (1995).
20. A. Zubka, R. Dwilinski, B. Suchanek, W.
Janik, A. Wysmolek , S. Kwiatkowski, M.
Kaminska, L. Shaginyan
GaN layers grown by ractive ion plating
Proc. of the
Jaszowiec 1995
Acta Phys. Pol. A 88, 1058-1061 (1995).
19. K. Pakula, J. M. Baranowski, R.
Stepniewski, A. Wysmolek ,
Porowski, M. Sawicki, K. Starowieyski
Growth of GaN Metaloorganic Chemical Vapour
Deposition Layers on GaN Single
Proc. of the
Jaszowiec 1995
Acta Phys. Pol. A 88, 861-864 (1995).
18. A. Wysmolek , J.M.
Baranowski, M. Kaminska
Origin of centres involved in blue and orange
luminescence of 6H - SiC
Proc. of the
Jaszowiec 1995
Acta Phys. Pol. A 88, 957-960 (1995).
17. K. Pakula, J.M. Baranowski, R. Stepniewski,
A. Wysmolek ,
Porowski, M. Sawicki, K. Starowieyski,
"Growth of GaN Metalorganic Chemical
Vapour Depositions Layers on GaN single
Proc. of the
Jaszowiec 1995
Acta Physica Polonica A88, pp. 861-664 (1995)
1994
16. T. Slupinski, J. Przybytek, A. Wysmolek , M. Leszczynski, A. Babinski, J. Borysiuk, A.
Kurpiewski, A. Barcz and R. Stepniewski,
Single crystals of GaAsP grown by the
Czochralski method
Proc. 8th Conf. on
Semi-insulating III-V Materials
Godlewski, pp. 39-42
15. A. Babinski and A. Wysmolek
,
Orientatinat degeneracy of the acceptor level
of the metastable EL2
Proc. 8th Conf. on
Semi-insulating III-V Materials
Godlewski, pp. 221-224.
14. A. Babinski, A. Wysmolek and J. M.
Baranowski,
Splitting of the metastable EL2 acceptor state
Phys. Rev. B50, 10656-10660 (1994).
1993
13. T. Slupinski, G. Nowak, R. Bozek, A. Wysmolek , M. Baj,
Huge negative persistent photoconductivity of
bulk GaAs1-XPX (x=0.02-0.03) single
crystals,
Materials Science and Engineering, B 21,
325-328 (1993)
12. A. Babinski, A.Wysmolek.,
M.Baj,
Symmetry of the acceptor-like state of the EL2
defect in the metastable configuration,
Proceedings of the 17th International
Conference on Defects in Semiconductors,
Materials Sience Forum vols.
143-147 (1994) pp. 335-340.
11. A. Babinski, A. Wysmolek
, T. Slupiñski,
DLTS measurements of an acceptor-like state of
metastable EL2 in GaAs and GaAsP,
Proc. of the
Jaszowiec 1993
Acta Phys. Pol. A 84, 673-676 (1993).
10. A.M. Hennel, A. Wysmolek and R.
Bo¿ek,
Isotopic structure and the Jahn-Teller Effect
in iron - doped III-V materials,
Proceedings of the 17th International
Conference on Defects in Semiconductors,
Materials Sience Forum vols.
143-147 (1993) pp. 1051-1056.
1992
9. A. Babinski and A. Wysmolek
,
Electrical properties of an acceptor-like state
of metastable EL2 in n-type GaAs under
uniaxial stress,
Proc. of the
Jaszowiec 1992
Acta Phys. Pol. A 82, 908-911 (1992).
8. A. Wysmolek R. Tryc, R. Bozek and A.M.
Hennel,
Proc. of the
Jaszowiec 1992
"Excitonic" and
photoionization absorption spectra of iron in III-V materials.
Acta Phys. Pol. A 82, 911-914 (1992).
7. K.P. Korona, A. Wysmolek ,
R. Bo¿ek, M. Kaminska, J.M. Baranowski, E.R. Weber,
Optical and electrical
measurements of Low-Temperature InAlAs.
Proc. of the
Jaszowiec 1992
Acta Phys. Pol. A 82, 825-828 (1992)
6. R. Dwilinski, M.Palczewska, P.Kaczor,
K.Korona, A.Wysmolek, R. Bo¿ek, M.
Kaminska,
Optical and Electrical Studies of FR1 and FR2
Defects in GaAs,
Proc. of the
Jaszowiec 1992
Acta Phys. Pol. A 82, 613-617 (1992).
5. A. Wysmolek ,
R.Bozek, A. Babinski, A.M. Hennel,
Hydrostatic pressure spectroscopy of the
vanadium luminescence in GaAs,
Proc. of the
Jaszowiec 1992
Acta Phys. Pol. A 82, 837-840 (1992).
1991
4. A.M. Hennel, A.Wysmolek, R. Bozek, D.
Reinvestigation of the optical properties of
the iron impurity in GaAs and InP,
Proc. of the 16. International Conference on Defects in Semiconductors
1991
Material Science Forum 83-87, 729-744 (1991)
1990
3. A. Wysmolek and A.M. Hennel,
Photoionization spectra of iron-doped InP and GaAs,
Proc. of the
Jaszowiec 1989
Acta Phys. Pol. A.77, 67-70 (1990).
1989
2. A. Wysmolek, A.M. Hennel,
High resolution measurements of V3+(3d2) absorption spectra in GaAs,
Proc. of the
Jaszowiec 1988
Acta Phys. Pol. A 75, 155-158 (1989).
1. A. Wysmolek , Z.
Liro and A.M. Hennel,
High resolution measurements of the 3A2
->3T2 absorption spectrum in V doped GaAs,
Proceedings of the 15th International
Conference on Defects in Semiconductors
ICDS-15,
Material Science Forum
38-41, 827-832 (1989).