Wednesday, July 24
Place: Main Campus of the Warsaw University, 26/28 Krakowskie Przedmiescie
Street,
“Kazimierzowski
Palace” (Rectors building)
| 16:00-20:00 | Registration |
| 18:30-20:30 | Welcoming glass of wine |
Thursday, July 25
Place: Faculty of
Physics, 69 Hoza Street
| 8:00 | Registration |
| 8:50 - 9:00 | Opening |
| 9:00 - 9:40 | Invited: The Origin of Co Existence of Optical
Transparency with Electrical Conductivity: The case of n-ZnO and n-SnO2
A. Zunger |
| 9:40 - 10:20 | Invited: Si donors in AlGaN alloys
M.S. Brandt, M.W. Bayerl, S.T.B. Goennenwein, R. Zeisel, and M. Stutzmann |
| 10:20 - 12:00 | Posters and coffee |
| 12:00 - 12:20 | Optical identification of impurity levels in Phosphorus-doped wide-gap
II-VI bulk semimagnetic semiconductors
Le Van Khoi, J.Kossut, R.R.Galazka |
| 12:20 - 12:40 | Mixing of impurity levels by an interface electric field in CdMgTe/CdZnTe
heterostructure
J.Lusakowski, G.Cywinski and J.Kossut |
| 12:40 - 13:00 | Residual Donors in Wurtzite GaN Homoepitaxial Layers and Heterostructures.
G.Neu, M.Teisseire-Doninelli, C.Morhain, B.Beaumont, E.Frayssinet, M.L.Sadowski, W.Knap, A.M.Witowski, M.Leszczynski and P.Prystawko |
| 13:00 - 14:30 | LUNCH |
| 14:30 - 15:10 | Invited: Development of Alternative Co-doping
Method of Mg and Si in GaN
S. Iwai, H. Hirayama, Y. Aoyagi |
| 15:10 - 15:30 | Optical Properties of Si, Ge and Sn- DOPED GaN
A.Shikanai, H.Fukahori, Y.Kawakami, T.Mitani, T.Mukai, and Sg.Fujita |
| 15:30 - 15:50 | Dynamics of Trapping on Donors and Relaxation of the B-exciton in GaN
K.P.Korona, A.Wysmolek, R.Stepniewski, M.Potemski, J.Kuhl, J.M.Baranowski, G.Martinez, I.Grzegory, S.Porowski |
| 15:50 - 16:10 | Coffee break |
| 16:10 - 16:50 | Invited: "Some like it shallower" - p-type
doping in SiC
Peter Deak |
| 16:50 - 17:10 | Nitrogen Dopants and the Z1/Z2 Defects in 4H-SIC
T.A.G.Eberlein, R.Jones, J.P.Goss, and P.R.Briddon |
| 17:10 - 17:30 | Picosecond Time-Resolved Studies of the Excited State Lifetime of
Be Acceptors in GaAs/AlGaAs Quantum Wells
W.-M.Zheng, M.P.Halsall, P.Harrison, J.-P R.Wells, I.V.Bradley and M.J.Steer |
| 17:30 - 17:50 | Extended Theory for Local-Phonon-Coupled Low-Energy Anharmonic Excitation
of Oxygen in Silicon
H.Yamada-Kaneta |
Friday, July 26
Place: Faculty of
Physics, 69 Hoza Street
| 9:00 - 9:40 | Invited: Kinetics of Thermal Double
Donor Formation in Hydrogenated Cz-Si
L.I.Murin, V.P.Markevich, J.L.Lindström, T.Hallberg |
| 9:40 - 10:20 | Invited: X-Ray Evidence of Impurity Atoms
Self-Organization in Heavily Doped Annealed GaAs:Te
T.Slupinski, E.Zielinska-Rohozinska |
| 10:20 - 12:00 | Posters and coffee |
| 12:00 - 12:20 | Far-Infrared Spectroscopy of Shallow Acceptors in Semiinsulating
GaAs: Evidence for Defect Interactions With EL2
H.Ch.Alt, Y.Gomeniuk and U.Kretzer |
| 12:20 - 12:40 | Shallow Thermal Donors in Heat-Treated Czochralski Grown Silicon
V.V.Emtsev Jr., C.A.J.Ammerlaan, V.V.Emtsev, G.A.Oganesyan, B.A.Andreev, D.I.Kuritsyn, A.Misiuk, B.Surma, C.A.Londos |
| 12:40 - 13:00 | Study of IR Absprption and Photoconductivity Spectra of Thermal Double
Donors in Silicon
B.A.Andreev, V.V.Emtsev, D.I.Kryzhkov, D.I.Kuritsyn, and V.B.Shmagin |
| 13:00 - 14:30 | LUNCH |
| 14:30 - 15:10 | Invited: Peculiarities of Conductivity via
Impurities in Low Doped Uncompensated Silicon
A.P.Melnikov |
| 15:10 - 15:50 | Invited: Optically Pumped THz Semiconductor
Bulk Lasers
S.G. Pavlov, H.-W.Hübers, V.N.Shastin, R.Kh. Zhukavin, E.E.Orlova, H.Riemann, and H.Nakata |
| 15:50 - 16:10 | Coffee break |
| 16:10-16:30 | THz Lasing of SiGe/Si Quantum-Well Structures Due to Shallow Acceptors
I.V.Altukhov, E.G.Chirkova, V.P.Sinis, M.S.Kagan, R.T.Troeger, S.K.Ray, J.Kolodzey |
| 16:30-16:50 | Impurity Pairs and Relaxation of Excitation in Silicon Doped with III
and V Group Impurities
Ya.E.Pokrovskii and N.A.Khvalkovskii |
| 16:50-17:10 | On the Impurity Photoconductivity of Uniaxially Stressed p-Ge
V.Ya.Aleshkin, A.V.Gavrilenko, V.I.Gavrilenko, D.V.Kozlov, A.T.Dalakjan, V.N.Tulupenko |
| 19:00 | Conference Dinner |
Saturday, July 27
Place: Faculty of
Physics, 69 Hoza Street
| 9:00 - 9:40 | Invited: Hydrogen as a Shallow
Center in Semiconductors
C.G. Van de Walle |
| 9:40 - 10:00 | Hydrogen and Muon States in II-VI Semiconductor Compounds
A.Weidinger, H.V.Alberto, J.M.Gil, R.C.Vilao, J.Piroto Duarte, N.Ayres de Campos, S.F.J.Cox, S.P.Cottrell, P.J.C.King, J.S.Lord, E.A.Davis |
| 10:00 - 10:20 | Hydrogen Passivation of the SiGa DONOR in GaP
W.Ulrici, B.Clerjaud, D.Côte |
| 10:20 - 12:00 | Posters and coffee |
| 12:00 - 12:20 | The Electrical Activity of Shallow Hydrogen Centres in Carbon Rich
Silicon
B.Hourahine, R.Jones, O.Andersen, L.Dobaczewski, A.R.Peaker, K.Bonde Nielsen, P.R.Briddon, S.Öberg |
| 12:20 - 12:40 | Shallow Donor Activity of S-H, Se-H and Te-H Complexes in Silicon
J.Coutinho, V.J.B.Torres, A.Resende, R.Jones, P.R.Briddon |
| 12:40 - 13:00 | Coulomb Related Landau Spectra of Axial and Double Acceptors in Germanium
P.Fisher, R.E.M.Vickers, K.Ishida |
| 13:00 - 14:30 | LUNCH |
| 14:30 - 15:10 | Invited: Photoluminescence Studies on Isotopically
Purified Silicon
D.Karaiskaj, M.L.W.Thewalt, T.Ruf, M.Cardona |
| 15:10 - 15:50 | Invited: Selective Magneto-luminescence Spectroscopy
of Donor-acceptor Pairs in n-GaAs
A. Wysmolek |
| 15:50 - 16:10 | Coffee break |
| 16:10 - 16:30 | Anomalous PL Brightening Caused by Impact Formation of D+,X
Complex During Impact Ionization Avalanche in n-GaAs
Kazuori Aoki |
| 16:30 - 16:50 | MOCVD n-InAs Thin Layers Compared with MBE Samples - Far Infrared Magnetophotoconductivity
Z.Romanowski, M.Szot, K.Karpierz, R.Bozek, R.Stepniewski and M.Grynberg |
| 16:50 - | Closing address |