• Shallow levels in low dimension
• Shallow levels in wide gap semiconductors like diamond, SiC, GaN, ZnO
• Shallow levels in “classical” semiconductors like Ge, Si, GaAs.
• Frontiers

Preliminary list of Invited Talks

• P. Deak, Budapest University of Technology and Economics, Hungary
  The behavior of dopants in SiC
• A. Zunger, National Renewable Energy Laboratory, USA
  The Origin of Co Existence of Optical Transparency with Electrical Conductivity:
  The case of n-ZnO and n-SnO₂
• Y. Aoyagi, RIKEN Institute and Tokyo Institute of Technology, Japan
  Development of Alternative Co-doping Method of Mg and Si in GaN
• M. S. Brandt, Walter Schottky Institute, Germany
  Si donors in AlGaN alloys
• C. G. Van de Walle, Xerox Palo Alto Research Center, USA
  Hydrogen as a shallow center in semiconductors
• A. Wysmolek, Warsaw University, Poland
  Selective magneto-luminescence spectroscopy of donor-acceptor pairs in n-GaAs
• A. P. Melnikov, Moscow Pedagogical State University, Russia
  Conductivity via impurities in low doped uncompensated silicon.