Adam Babiński
110. M.R.Molas, K.Nogajewski, M.Potemski, and A.Babiński
Raman scattering excitation spectroscopy of monolayer WS2
Scientific Reports 7, 5036 (2017).
109. K.Gołasa, M.Grzeszczyk, M.R.Molas, M.Zinkiewicz, K.Nogajewski, M.Potemski, A.Wysmołek, and A.Babiński
Anomalous Raman scattering in few monolayer MoTe2
MRS Advances 2, 1539 (2017).
108. K.Łempicka, K.Norowski, M.Grzeszczyk, M.Król, Gołasa, K.Lekenta, A.Babiński, B.Piętka, and J. Szczytko
Acta Physica Polonica A 132, 316 (2017).
107. K.Gołasa, M.Grzeszczyk, M.R.Molas, M.Zinkiewicz, Ł.Bala, K.Nogajewski, M.Potemski, A.Wysmołek, and A.Babiński
Resonant quenching of Raman scattering due to out-of-plane A1g/A1' modes in few-layer MoTe2
Nanophotonics 6, 1281 (2017).
106. K.Gołasa, M.R.Molas, K.Nogajewski, M.Grzeszczyk, M.Zinkiewicz, M.Potemski, and A.Babiński
The effect of Substrate on Vibrational Properties of Single-Layer MoS2
Acta Physica Polonica A 130, 1172 (2017).
105. M.R.Molas, A.Wójs, A.A.L.Nicolet, A.Babiński, and M.Potemski
Energy spectrum of confined positively charged excitons in single quantum dots
Physical Review B 94, 235416 (2016).
Copyright (2016) by the American Physical Society.
104. M.R Molas, A.A.L.Nicolet, B.Piętka, A Babiński, and M Potemski
The excited spin-triplet state of a charged exciton in quantum dots
J. Phys.: Condens. Matter 28, 365301 (2016).
103. M.Grzeszczyk, K.Gołasa, M.Zinkiewicz, K.Nogajewski, M.R.Molas, M.Potemski, A.Wysmołek, and A.Babiński
Raman scattering of few-layers MoTe2
2D Materials 3, 025010 (2016).
102. M. R. Molas, A. A. Nicolet, A. Babiński, and M. Potemski
Quadexciton cascade and fine-structure splitting of the triexciton in a single quantum dot
EPL
113, 17004 (2016).
101. K. Gołasa, M.Grzeszczyk, J.Binder, R. Bożek, A. Wysmołek, and A. Babiński
The disorder-induced Raman scattering in Au/MoS2 heterostructures
AIP Advances 5, 077120 (2015).
100. M. Zieliński, K. Gołasa, M.R.Molas, M.Goryca, T. Kazimierczuk, T. Smoleński, A. Golnik, P. Kossacki, A. A. L. Nicolet, M. Potemski, Z. R. Wasilewski,and A. Babiński
Excitonic complexes in natural InAs/GaAs quantum dots
Physical Review B 91, 085303 (2015).
Copyright (2015) by the American Physical Society.
99. K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński
Resonant Raman scattering in MoS2 - From bulk to monolayer
Solid State Communications
197, 53 (2014).
98. The following article appeared in Applied Physics Letters 104, 092106 (2014)
and may be found at (AIP Webpage)
K. Gołasa, M. Grzeszczyk, P. Leszczyński, C. Faugeras, A. A. L. Nicolet, A. Wysmołek, M. Potemski, and A. Babiński
97. K. Gołasa, M. Grzeszczyk, K.P.Korona, R. Bożek, J.Binder, J.Szczytko, A. Wysmołek, and A. Babiński
Optical Properties of Molybdenum Disulfide (MoS2)
Acta Physica Polonica A 124, 849 (2013).
96. M.R.Molas, A.A.Nicolet, M.Potemski, and A.Babiński
Intershell Exchange Interaction in Charged GaAlAs Quantum Dots,
Acta Physica Polonica A 124, 785 (2013).
95. K. Gołasa, M.Molas, M.Goryca, T.Kazimierczuk, T.Smoleński, M.Koperski, A.Golnik, P.Kossacki, M.Potemski, Z.R.Wasilewski, and A.Babinski
Properties of Excitons in Quantum Dots with a Weak Con finement,
Acta Physica Polonica A 124, 781 (2013).
94. A.Babinski, M.Korkusinski, P.Hawrylak, M.Potemski, and Z.R.Wasilewski,
J.Phys.: Conf. Ser. 456 , 012002 (2013).
93. A.Babiński, M. Potemski, P.C.M. Christianen,
Optical spectroscopy on semiconductor quantum dots in high magnetic fields,
Comptes rendus - Physique 14 , 121 (2013).
92. J.-G. Rousset, T. Słupinski, T. Jakubczyk,
J. Kobak, P. Stawicki, K. Gołasa,
A. Babinski, M. Nawrocki and W. Pacuski
MBE Growth and
Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots
Acta Physica Polonica A 122, 984 (2012).
91. M. Molas, K. Gołasa, B. Piętka,
M. Potemski and A. Babiński
Fine Structure of
Neutral Excitons in Single GaAlAs Quantum Dots ,
Acta Physica Polonica A 122, 988 (2012).
90. M. Molas, K. Gołasa,
M. Furman, J. Lapointe, Z.R. Wasilewski, M. Potemski and A. Babiński,
The Fine Structure
of a Triexciton in Single InAs/GaAs Quantum Dots,
Acta Physica Polonica A 122, 991 (2012).
89. The following article appeared in Journal of Applied Physics 111,
033510 (2012) and may be found at (AIP Webpage)
M. Molas, K. Gołasa, K. Kuldova, J.
Borysiuk, A. Babiński, J. Lapointe, and Z. R. Wasilewski,
88. T. Kazimierczuk,A. Golnik, P. Kossacki, J. A. Gaj, Z.R.Wasilewski, and A. Babinski;
Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer,
Physical Review B 84,
115325 (2011)
Copyright (2011) by the American Physical Society.
87. M. Molas, K.Kuldova, J. Borysiuk, Z.R.Wasilewski, and A. Babinski;
Quantum Confinement
in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush
Technique,
Acta Physica Polonica A 119, 624 (2011).
86. Karla Kuldova, M. Molas, Jolanta Borysiuk, A. Babinski, Z Vyborny, J. Pangrac, and J.
Oswald;
Quantum
confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum
dots,
J.Phys.: Conf.Ser. 245, 012079 (2010).
85. M. Yakushev, R. Martin, A. Babinski, and
A.Mudryi,
Effects of
magnetic fields on free excitons in CuInSe2,
phys. stat. sol.(c) 6, 1086-1088 (2009).
84. S. M. Vachon, S. Raymond, A. Babinski,J.Lapointe, Z.Wasilewski, and M. Potemski,
Energy shell structure of a single InAs/GaAs
quantum dot with a spin-orbit interaction
Phys. Rev. B 79 , 165427 (2009)
Copyright (2009) by the American Physical Society.
83. A. Babinski, A. Golnik, J.Borysiuk, S. Kret, P. Kossacki, J. A. Gaj, S. Raymond, M. Potemski, Z. R. Wasilewski,
Three-dimensional
localization of excitons in the InAs/GaAs wetting layer - magnetospectroscopic
study,
phys.
stat. sol. (b) 246, 850 (2009).
82. S.Awirothananon, S. Raymond, S. Studenikin, M. Vachon, W. Render, A. Sachrajda,
X. Wu, A. Babinski, M. Potemski, S. Fafard, S. J. Cheng, M. Korkusinski,
and P. Hawrylak,
Single-exciton energy shell structure in
InAs/GaAs quantum dots
Phys. Rev. B 78 , 235313 (2008)
Copyright (2008) by the American Physical Society.
81. A. Babinski, M. Czyż, J. Borysiuk, S.Kret, A. Golnik, S. Raymond, J.Lapointe, and Z.R.Wasilewski
Neutral and charged
excitons localized in the InAs/GaAs wetting layer
Acta Physica Polonica A, 114,
1055 (2008).
80. The following
article appeared in Appl. Phys. Lett. 92, 171104 (2008)
and may be found at (AIP
Webpage)
A.Babiński,
J.Borysiuk, S.Kret, M.Czyz, A.Golnik, S.Raymond, and Z.R.Wasilewski,
Natural quantum dots in the InAs/GaAs wetting layer
Copyright (2008) American
Institute of Physics. This article may be downloaded for personal use only. Any
other use requires prior permission of the author and the American Institute of
Physics.
79. A. Babinski, M. Potemski, S. Raymond and Z. Wasilewski,
Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer ,
Physica E, 40, 2078 (2008).
78. M. Korkusinski, P. Hawrylak, A. Babinski,M. Potemski, S. Raymond and Z. Wasilewski,
Optical readoutof charge and spin in a self-assembled quantum dot in a strong magnetic field
Europhysics Letters 79, 47005 (2007).
77. The following
article appeared in PHYSICS OF SEMICONDUCTORS: 28th International
Conference on the Physics of Semiconductors AIP Conference Proceedings 893,
905 (2007)
and may be found at (AIP Webpage):
A.
Babinski, M. Potemski, S.
Raymond, J. Lapointe, Z. R. Wasilewski, and J. M. Baranowski,
Excitonic Fock-Darwin Spectrum of a Single Quantum Dot.
Copyright (2007) American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires
prior permission of the author and the American Institute of Physics.
76. Weidong Sheng and A. Babiński,
Zero g factors and nonzero orbital momenta
in self-assembled quantum dots , Phys. Rev. B 75 , 033316 (2007)
Copyright (2007) by the American Physical Society.
75. J.Siwiec-Matuszyk, M. Baj, A. Babiński, J. Kasprzak,
Influence of
Intersubband Scattering on the Magnetic Field Dependence of the Conductivity
Tensor,
Acta Physica Polonica A 110 337 (2006).
74. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,
Fock-Darwin spectrum of a single InAs/GaAs quantum dot , phys. stat. sol. (c) 3 3748–3751
(2006).
73. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,
"Emission from a highly excited single
InAs-GaAs quantum dot in magnetic fields: An excitonic Fock-Darwin
diagram" Phys. Rev. B 74 , 155301 (2006)
Copyright (2006) by
the American Physical Society.
72. K. Korona, A. Babiński, S.Raymond, and Z.Wasilewski,
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System,
Acta Physica Polonica A 110 , 219 (2006).
71. A. Babiński,
Optical spectroscopy
of Quantum Dots in High Magnetic Fields,
Acta Physica Polonica A 110 , 275 (2006).
70. A. Babiński, M. Potemski, S.Raymond, M. Korkusinski, W.Sheng,
P. Hawrylak, and Z.Wasilewski,
Optical
spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields,
Physica E 34 , 288 (2006).
69. A.Babiński, G. Ortner, S.Raymond, M. Potemski, M. Bayer, W.Sheng, P.
Hawrylak, Z.Wasilewski, S.Fafard, and A. Forchel,
" Ground-state emission from a single
InAs/GaAs quantum dot structure in ultrahigh magnetic fields"
Phys. Rev. B 74 , 075310 (2006)
Copyright (2006) by the American Physical Society.
68. The following
article appeared in Appl. Phys. Lett. 88, 051909 (2006)
and may be found at (AIP
Webpage)
A. Babiński,
M.Potemski, and H.Shtrikman
Quantum oscillations of the luminescence from a
modulation-doped GaAs/InGaAs/GaAlAs quantum well
Copyright (2006) American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires
prior permission of the author and the American Institute of Physics.
67. The following
article appeared in PHYSICS OF SEMICONDUCTORS: Proceedings of the
27th Int. Conf. on the Physics of Semiconductors ed. by José Menéndez and Chris
G. Van de Walle, AIP Conference Proceedings 772, 685 (2005) and may be found at (AIP Webpage)
M. Korkusinski, W.
Sheng, P. Hawrylak, Z. Wasilewski, G. Ortner, M. Bayer, A. Babinski, and
M. Potemski,
Electron and Hole States in Vertically
Coupled Self-Assembled InGaAs Quantum Dots.
Copyright (2005) American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires
prior permission of the author and the American Institute of Physics.
66. B. Chwalisz, A. Wysmołek, R. Stępniewski, A. Babiński, M
Potemski, V Thierry-Mieg,
"Magneto-luminescence of a single lateral island formed in a type - II
GaAs / AlAs QW" International Journal of Modern Physics, 18, 3807
(2004).
65. G. Ortner, I. Yugova, G. Baldassarri Höger
von Högersthal, A. Larionov, H. Kurtze, D. R. Yakovlev, M. Bayer, S. Fafard, Z.
Wasilewski, and P. Hawrylak, Y. B. Lyanda-Geller,T. L. Reinecke, A. Babiński,
M. Potemski, V. B. Timofeev and A. Forchel,
Fine
structure in the excitonic emission of InAs/GaAs quantum dot molecules ,
Phys. Rev. B 71 , 125335 (2005)
Copyright (2005) by
the American Physical Society.
64. A. Babiński, S. Awirothananon, J. Lapointe,
Z.Wasilewski, S. Raymond, and M. Potemski,
63. A. Wysmołek, B. Chwalisz, M. Potemski, R.Stępniewski, A. Babiński, S. Raymond, V Thierry-Mieg,
62. A. Babiński, S. Raymond, Z.Wasilewski, J.Lapointe,
and M. Potemski,
61. S. Awirothananon, W.D.Sheng, A. Babiński, S. Studenikin, S. Raymond, A. Sachrajda, M.
Potemski, S. Fafard, G. Ortner, and M. Bayer,
60. D.Smirnov, S.Raymond, S.Studenikin, A.Babiński , J.Leotin,
P.Frings, M.Potemski, and A.Sachrajda,
Electronic
structure of InAs/GaAs self-assembled quantum dots studied by high-excitation
luminescence in magnetic fields up to 73T, Physica B, 346-347, 432
(2004).
59. S. Raymond, S. Studenikin,
A. Sachrajda, Z. Wasilewski, S. J. Cheng, W. Sheng, P. Hawrylak, A. Babiński, M. Potemski, G. Ortner, and M. Bayer,
Copyright (2004) by the American Physical Society.
58. A. Babiński,
S. Awirothananon, S. Raymond, S. Studenikin, P. Hawrylak, S. -J. Cheng, W.
Sheng, Z. Wasilewski, M. Potemski , and A. Sachrajda,
Photoluminescence
excitation spectroscopy of InAs/GaAs quantum dots in high magnetic field,
Physica E, 22, 603 (2004).
57. J-N Isaia, A.Babiński ,L-A de Vaulchier, M.Potemski,
Y.Guldner,and J-M Gerard,
56. S.J.Cheng, W.Sheng, P.Hawrylak, S.Raymond, S.Studenikin,
A.Sachrajda, Z.Wasilewski, A.Babiński , M.Potemski, G.Ortner, and
M.Bayer,
Electron-hole
complexes in self-assembled quantum dots in strong magnetic field, Physica
E, 21, 211 (2004).
55. A.Babiński , M.Potemski, H.Shtrikman,
Physics of Semiconductors 2002, Proceedings of the 26th ICPS, Edinburgh 2002,
ed. A.R.Long and J.H.Davies, Inst. of Physics Conference Series 171, Bristol
and Philadelphia 2002, H61.
54. A. Drabińska, K. P. Korona, R. Bożek, A. Babiński, J. M.
Baranowski, W. Pacuski, R. Stępniewski, and T. Tomaszewicz,
"Determination of Si d-doping
concentration in GaN by Electroreflectance", phys. stat.
sol. (b) 234, 868 (2002).
53. Self-Assembled Quantum Dots in Electric Field , in " Quantum Dots and Nanowires"
American Scientific Publishers, 2002
52. The following
article appeared in Journal of Applied Physics 92, 163 (2002) and may be found at (AIP Webpage)
Aneta Drabińska, A.
Babiński, T. Tomaszewicz, R. Bożek, and J. M. Baranowski
" Optical determination of the dopant concentration
in the d-doping layer"
Copyright (2002) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
51. A. Babiński
, M.Potemski, and H.Shtrikman,
Free-to-bound and interband recombination in the
photoluminescence of a dense two-dimensional electron gas , Phys. Rev. B 65
, 233307 (2002)
50. A. Babiński and J.Jasiński , Post-growth thermal
treatment of self-assembled InAs/GaAs quantum dots, Thin Solid Films
412/1-2 84 (2002)
49. L.V.Dao, M.Gal, A.Babiński, and J.Jagadish; " Ultrafast
time-resolved photoluminescence measurements on InGaAs/GaAs Quantum Dots "
COMMAD 2000. Conference Proc. Conference on Optoelectronic
and Microelectronic Materials and Devices (Cat. No.00EX466), ed. L.Broekman,
B.Usher, and J. Riley, IEEE,
48. E.Ilczuk, K.P.Korona, A. Babiński, and J.Kuhl, "The
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots" , Acta
Phys.Pol. A 100, 379 (2001).
47. The following
article appeared in Appl. Phys. Lett. 79, 2576 (2001) and may be
found at (AIP Webpage)
A.Babiński, J.Jasiński, R.
Bożek, A. Szepielow, and J.M. Baranowski;
" Rapid thermal annealing of InAs/GaAs quantum
dots under GaAs proximity-cap "
Copyright (2001) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
46. K. P.Korona, A.Babiński, J.Kuhl, J.M.Baranowski, and
R.Leon; "Step-like
Photoluminescence Dynamics in Field-Effect Structures Containing Quantum
Dots" phys. stat. sol. (b) 227, 605 (2001).
45. Z. Dziuba, M. Górska, J. Antoszewski, A.Babiński, P. Kozodoy,
S. Keller, B. Keller , S. P. DenBaars, and U. K. Mishra, Quantum corrections to the electrical
conduction in an AlGaN/GaN heterostructure, Applied Physics A 72, 691
(2001).
44. A.Babiński, R. Kulawiński, T. Tomaszewicz, J.M. Baranowski; " Optical determination of delta -doping concentration
in semiconductor structures "
ASDAM 2000. Conference Proceedings. Third International EuroConference on
Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). IEEE,
43. The following
article appeared in Appl. Phys. Lett. 78, 3992 (2001)
and may be found at (AIP Webpage)
A. Babiński, P. Witczak, A.
Twardowski, and J. M. Baranowski;
"Electroluminescence from a forward-biased Schottky
barrier diode on modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure "
Copyright (2001) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
42. A.Babiński, J.M. Baranowski, R.Leon, and C. Jagadish,
"Field-Effect Structure with Double layer of InGaAs/GaAs Quantum Dots - a
new concept of Electron Tunneling Device "
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642,
J.4.6.1;
41. J.Jasiński, A.Babiński, R. Bożek, A. Szepielow, and J.M.
Baranowski, "Effects of Annealing on Self-Assembled InAs Quantum Dots and
Wetting Layer in GaAs Matrix;
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642,
J3.39.1;
40. J.Jasiński, A.Babiński, M.Czeczott, and R.Bożek,
"InGaAs/GaAs quantum dot interdiffusion induced by cap layer
overgrowth"
Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin
Films ed. Millunchick JM; Barabasi AL; Modine NA; Jones ED., Mater. Res. Soc.
Proc. 618, pp.179-84.
39. A.Babiński, P.Witczak, S.Lavorik, and A.Twardowski,
"Low-temperature light emission in a forward-biased Schottky diode with a n-doped channel"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
38. J.Jasiński, A.Babiński, R.Bożek, and J.M.Baranowski,
"Post-growth thermal treatment of InAs/GaAs quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
37. A.Babiński, K.P.Korona, and J.M.Baranowski, "The effect
of electric field on the self-organized quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
36. The following
article appeared in Appl. Phys. Lett. 77, 999 (2000)
and may be found at (AIP Webpage)
A.Babiński, J.Siwiec-Matuszyk,
J.M.Baranowski, G.Li, and C.Jagadish,
"Transport and quantum electron mobility in the
modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs quantum well grown by
metalorganic vapor phase epitaxy"
Copyright (2000) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
35. A.Babiński, "Photoluminescence from InGaAs/GaAs Quantum
dots in high electric field"
NATO ANSI Conf. Ser. Optical properties of Semiconductor Nanostructures ed by
M.L.Sadowski, M.Potemski, and M.Grynberg, Kluver Academic Publishers, p. 395
34. T.Tomaszewicz, A.Babiński , D.Suska,
J.M.Baranowski, "Electroreflectance
Bias-Wavelength Mapping of the GaAs/InGaAs/AlGaAs structure" , Inst. Phys.
Conf. Ser. No 166, 143 (2000)
33. A.Babiński and J.M.Baranowski, "The effect of electron occupation
on the photoluminescence from the self-organized InGaAs/GaAs quantum dots"
physica status solidi a 187, 313 (2000)
32. A.Babiński, T.Tomaszewicz,
A.Wysmołek, J.M.Baranowski, C.Lobo, R.Leon, and C.Jagadish, "Optical
properties of self-organized InGaAs/GaAs quantum dots in field effect
structures"
Microcrystalline and Nanocrystalline Semiconductors - 1998. Mater. Res. Soc.
Proc. 536, pp.269-74.
31. The following
article appeared in Appl. Phys. Lett. 75, 2088 (1999)
and may be found at (AIP Webpage)
T.
Tomaszewicz, A.Babiński , D.Suska, J.M.Baranowski, and A.Tomaszewicz,
Electroreflectance Bias-Wavelength Mapping of the
modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
Copyright (1999) American Institute of
Physics. This article may be downloaded for personal use only. Any other use
requires prior permission of the author and the American Institute of Physics.
30. The following
article appeared in Appl. Phys. Lett. 73, 2811 (1998)
and may be found at (AIP Webpage)
A.Babiński,A.Wysmołek,
T.Tomaszewicz, J.M.Baranowski, R.Leon, C.Lobo, and C.Jagadish,
"Electrically modulated photoluminescence in
self-organized InGaAs/GaAs quantum dots"
Copyright (1998) American Institute of
Physics. This article may be downloaded for personal use only. Any other use
requires prior permission of the author and the American Institute of Physics.
29. G.Li, M.B.Johnston, A.Babiński ,
S.Yuan, M.Gal, S.J.Chua, and C.Jagadish, "Si
and C d-doping for device applications" J.Cryst. Growth 195, 54
(98)
28. A.Babiński, G.Li, and C.Jagadish, "Magnetotransport
measurements on modulation Si d-doped pseudomorphic InGaAs/GaAs quantum
wells" Physica B 246-247, 289 (1998)
27. The following
article appeared in Appl. Phys. Lett. 72, 2322 (1998)
and may be found at (AIP Webpage)
G. Li, A.Babiński, S. J. Chua and C. Jagadish,
Electron Transfer Efficiency in Si d-Modulation Doped
Pseudomorphic GaAs/InGaAs/AlGaAs QWs
Copyright (1998) American Institute of
Physics. This article may be downloaded for personal use only. Any other use
requires prior permission of the author and the American Institute of Physics.
26. A.Babiński, G.Li, and C.Jagadish, "The effect of band
bending on the transport properties of modulation doped pseudomorphic
InGaAs/GaAs quantum wells"
Proceedings of the 4th Vaccum Society of Australia Congress, Canberra 1997
25. The following article appeared in Appl.
Phys. Lett. 71, 1664 (1997)
and may be found at (AIP Webpage)
A.Babiński,G.Li, and C.Jagadish,
The persistent photoconductivity effect in modulation
Si d-doped pseudomorphic InGaAs/GaAs quantum well structure
Copyright (1997) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
24.A.Babiński, R.Leon, and C.Jagadish, "Capacitance
measurements on self-organised MOCVD grown InGaAs quantum dots", Proc. of
1996 COMMAD-96 Conference, ed. C. Jagadish, Canberra 1996, p.183
23. The following article appeared in Appl.
Phys. Lett. 70, 3582 (1997)
and may be found at (AIP Webpage)
G.Li, A.Babiński, and C.Jagadish,
Subband electron densities of Si delta-doped
pseudomorphic InGaAs/GaAs heterostructures
Copyright(1997) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
22.
R.Bożek, A.Babiński, J.M.Baranowski, R.Stępniewski, Z. Klusek, W.
Olejniczak, K. Starowieyski, and J.Wróbel, "GaSb dots grown on GaAs
surface by MOCVD", Acta Phys. Pol. A 88,
974 (1995).
21. A.Babiński and J.M.Baranowski, "Splitting of the acceptor level of
the metastable EL2 under uniaxial stress", Proc. of 22nd ICPS,
20. A.Babiński,
A.Wysmołek, and J.M.Baranowski,
Splitting of the metastable EL2 acceptor state,
Phys. Rev. B 50, 10656 (1994)
Copyright (1994) by the American Physical Society
19. T.Słupiński, A.Wysmołek, M.Leszczyński, A.Babiński,
A.Kurpiewski, A.Barcz, and R.Stępniewski,
"Single crystals of GaAsP grown by the Czochralski method,
"Semi-Insulating III-V Materials Conference, Warszawa 1994", ed.
M.Godlewski, 39.
18. A.Babiński and A.Wysmołek, "Orientational degeneracy of
the acceptor level of the metastable EL2", "Semi-Insulating III-V Materials
Conference, Warszawa 1994", ed. M.Godlewski, 221.
17. A.Babiński and A.Wysmołek, Orientation of the metastable EL2 under
uniaxial stress, Acta Phys. Pol. A 87, 137 (1995).
16. A.Babiński,
"Pokaz efektu Halla na sali wykladowej", Postępy Fizyki, 45,
(1994), 169 (in Polish)
15. A.Babiński, A.Wysmołek, and M.Baj, "Symmetry of the
acceptor-like state of the EL2 defect in the metastable configuration",
Mat.Sc.Forum, vol. 143-147, 1051 (1994)
14. P.Trautman, J.M.Baranowski, and A.Babiński, "Ordering of
the EL2 defect in the metastable state", Mat.Sc.Forum, vol. 143-147,
1007 (1994)
13. A.Babiński, A.Wysmołek, and T.Słupiński, "DLTS measurements of an acceptor-like state
of metastable EL2 in GaAs and GaAsP", Acta Phys. Pol., A 84, 673
(1993)
12. A. Wysmołek, R. Bozek, A. Babiński,
and A. M. Hennel, Hydrostatic pressure
spectroscopy of the vanadium luminescence in GaAs, Acta Physica Polonica A 82,
837 (1992).
11. A. Babiński, J.Przybytek, M.Baj, P.Omling, L.Samuelson, and
T.Słupiński, Hydrostatic-pressure DLTS study of the
heteroantisite antimony level in GaAs, Acta Phys.Pol. A 82, 841
(1992).
10. A.Babiński and A.Wysmołek, Electrical properties of an acceptor-like
state of metastable EL2 in n-type GaAs under uniaxial stress , Acta Phys.Pol. A 82, 908 (1992).
9. A.Babiński, K.P.Korona, and A.M.Hennel, "Properties of
the Fe acceptor level in InP under hydrostatic pressure",
"Semi-Insulating III-V Materials Conference, Ixtapa 1992", ed.
B.Ford, C.Miner, E.R.Weber, 253.
8. M.Baj, P.Dreszer,
and A.Babiński,
Pressure-induced charge state of EL2 defect in its
metastable state, Phys. Rev. B 43, 2070 (1991)
Copyright (1991) by the American Physical Society
7. J.Muszalski, A.Babiński, K.P.Korona, E.Kamińska, A.Piotrowska,
M.Kamińska, and E.R.Weber, "First TSC and DLTS measurements of low
temperature GaAs", Acta Phys.Pol. A 80,
413 (1991).
6. A.Babiński and E.Gołdys, "Passivation of a bulk defect EC-0.22eV
in GaAs in phosphoric acid", Acta Phys.Pol. A 79,
277 (1991).
5. A.Babiński, M.Baj, and A.M.Hennel, The pressure dependence of transition
metal-related levels in GaAs, Acta Physica
Polonica A 79, 323 (1991).
4. M.Baj, P.Dreszer, and A.Babiński, "Acceptor-like level of the EL2 defect
in its metastable configuration", Proc. of 20th ICPS Saloniki 1990, ed.
E.M.Anastassakis,
3. M.Baj, P.Dreszer, and A.Babiński, "Acceptor-like level of the EL2 defect in its metastable
configuration", Acta Phys. Pol. A 79, 129 (1991).
2. K.P.Korona, K.Karpińska, A.Babiński,
and A.M.Hennel, Deep Level Transient
Spectroscopy measurements of p-type
InP, Acta Phys. Pol. A 77, 71 (1990).
1. A.Babiński, J.M.Baranowski, and M.Czub, Deep Levels in GaAs prepared by VPE, Acta Physica Polonica A 77, 335 (1990).