Seminarium Fizyki Ciała Stałego

Three main growth methods for crystallizing bulk GaN: i/ halide vapor phase epitaxy (HVPE); ii/ ammonothermal (basic and acidic); iii/ sodium flux will be discussed. All these methods seem to be very perspective for obtaining bulk GaN and fabricating high quality GaN substrates. Ammonothermal GaN crystals demonstrate perfect structural quality; it can still be improved and transferred to HVPE-GaN. HVPE technology is also the best for growing drift layers for electronic devices. Ultra-high-pressure annealing (UHPA) is a very promising technology for fabricating devices with selectively implanted areas.

Uwaga
Seminarium w trybie Hybrydowym
Faculty of Physics room 0.06
link to remote mode:
https://zoom.us/j/7218838148
szczegóły patrz instrukcja :
instrukcja: (pdf file)

Attention
The seminar in the Hybrid mode
Faculty of Physics room 0.06
for details see instruction :
instruction: (pdf file)