A. Nouiri, Y. Sayad, and A. Djemel |
STUDY OF ACCEPTOR CENTERS IN GaAs AFTER HIGH TEMPERATURE ANNEALING.EXPERIMENTS AND CALCULATION. |
A.E. Nickolaenko, A.M. Gilinsky, O.A. Shegai, T.S. Shamirzaev, and K.S. Zhuravlev |
OPTICALLY DETECTED MAGNETIC RESONANCE OF SHALLOW DONORS IN GaAs OBSERVED IN PHOTOLUMINESCENCE KINETICS |
B.N. Zaverukhin, N.N. Zaverukhina, E.B Zaverukhina |
IONIZATION of SHALLOW IMPURITY CENTERS by ULTRASONIC WAVE in SEMICONDUCTORS |
E.P.Skipetrov, E.A.Zvereva, N.A.Chernova, L.A.Skipetrova, B.B.Kovalev, O.S.Volkova, A.V.Golubev, E.I.Slyn'ko |
IMPUTITY RELATED MAGNETISM IN THE DILUTED MAGNETIC SEMICONDUCTORS Pb1-xSnxTe:Yb. |
Kh. O. Ibragimov, N. S. Abakarova and K. M. Aliev |
INSTABILITY of a CURRENT in p-GE with DEEP-LEVELS of Au |
M.A. Chernikov, O.A. Ryabushkin |
ACCEPTOR STATES DETECTION by MICROWAVE and CURRENT MODULATION SPECTROSCOPY. |
N. Romčević, D.R. Khokhlov, D. Stojanović, M. Romčević and A. V. Nikorich |
DX-LIKE CENTERS and PERSISTENT PHOTOCONDUCTIVITY EFFECT in INDIUM DOPED PbTe BASED ALLOYS |
N.T. Bagraev, A.D. Bouravleuv, W. Gehlhoff, L.E. Klyachkin, A.M. Malyarenko |
ELECTRON-DIPOLE RESONANCE of IMPURITY CENTRES EMBEDDED in SILICON MICROCAVITIES |
O.Shpotyuk, J.Filipecki, A.Kozdras, A.Kovalskiy |
COORDINATION POSITRON-TRAPPING CENTERS IN VITREOUS CHALCOGENIDE SEMICONDUCTORS |
R. Mota, M. Machado and P. Piquini |
ELECTRONIC and STRUCTURAL PROPERTIES of BN NANOCONES |
S.A. Omelchenko, Yu.A. Gulevski, V.I. Klimenko, M.F. Bulanyi, S.Z. Shmurak |
IRREVERSIBLE TRANSFORMING of SHALLOW CENTRES in ELECTRIC FIELDS of DISLOCATIONS |
T.S. Shamirzaev, K.S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J.Z. Domagala,
J Adamczewska, V.V. Preobrazhenskii |
STRESS INDUCED TRANSFORMATION IN PHOTOLUMINESCENCE SPECTRA OF HOMOEPITAXIAL BERYLLIUM - DOPED GaAs THIN FILMS |
Takao Wada and Hiroshi Fujimoto |
IDENTIFICATION of SUPERDIFFUSION of IMPURITY ATOMS in DAMAGE-FREE REGIONS of SEMICONDUCTORS |
Takao Wada and Hiroshi Fujimoto |
ELECTRON BEAM DOPING of IMPURITY ATOMS into SEMICONDUCTORS by SUPERDIFFUSION |
V.P. Markevich, V.V. Litvinov, L. Dobaczewski, L.J. Lindström, L.I. Murine, and A.R.Peaker |
RADIATION-INDUCED DEFECTS and THEIR TRANSFORMATIONS in OXYGEN-RICH GERMANIUM CRYSTALS |
W. Gehlhoff , D. Azamat, A. Hoffman, and N. Dietz |
DONOR CENTRES in ZINC GERMANIUM DIPHOSPHIDE PRODUCED by ELECTRON IRRADIATION |
Yong-Sung Kim and K. J. Chang |
NITROGEN-HYDROGEN COMPLEXES in GaAs and GaAs1-xNx ALLOYS |