(Last modification - 2002.07.05)
Tentative Program of SLCS-10
Poster Session, Saturday - July 27
 
A. Nouiri, Y. Sayad, and A. Djemel STUDY OF ACCEPTOR CENTERS IN GaAs AFTER HIGH TEMPERATURE ANNEALING.EXPERIMENTS AND CALCULATION.
A.E. Nickolaenko, A.M. Gilinsky, O.A. Shegai, T.S. Shamirzaev, and K.S. Zhuravlev OPTICALLY DETECTED MAGNETIC RESONANCE OF SHALLOW DONORS IN GaAs OBSERVED IN PHOTOLUMINESCENCE KINETICS
B.N. Zaverukhin, N.N. Zaverukhina, E.B Zaverukhina IONIZATION of SHALLOW IMPURITY CENTERS by ULTRASONIC WAVE in SEMICONDUCTORS
E.P.Skipetrov, E.A.Zvereva, N.A.Chernova, L.A.Skipetrova, B.B.Kovalev, O.S.Volkova, A.V.Golubev, E.I.Slyn'ko IMPUTITY RELATED MAGNETISM IN THE DILUTED MAGNETIC SEMICONDUCTORS Pb1-xSnxTe:Yb.
Kh. O. Ibragimov, N. S. Abakarova and K. M. Aliev INSTABILITY of a CURRENT in p-GE with DEEP-LEVELS of Au
M.A. Chernikov, O.A. Ryabushkin ACCEPTOR STATES DETECTION by MICROWAVE and CURRENT MODULATION SPECTROSCOPY.
N. Romčević, D.R. Khokhlov, D. Stojanović, M. Romčević and A. V. Nikorich DX-LIKE CENTERS and PERSISTENT PHOTOCONDUCTIVITY EFFECT in INDIUM DOPED PbTe BASED ALLOYS
N.T. Bagraev, A.D. Bouravleuv, W. Gehlhoff, L.E. Klyachkin, A.M. Malyarenko ELECTRON-DIPOLE RESONANCE of IMPURITY CENTRES EMBEDDED in SILICON MICROCAVITIES
O.Shpotyuk, J.Filipecki, A.Kozdras, A.Kovalskiy COORDINATION POSITRON-TRAPPING CENTERS IN VITREOUS CHALCOGENIDE SEMICONDUCTORS
R. Mota, M. Machado and P. Piquini ELECTRONIC and STRUCTURAL PROPERTIES of BN NANOCONES
S.A. Omelchenko, Yu.A. Gulevski, V.I. Klimenko, M.F. Bulanyi, S.Z. Shmurak IRREVERSIBLE TRANSFORMING of SHALLOW CENTRES in ELECTRIC FIELDS of DISLOCATIONS
T.S. Shamirzaev, K.S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J.Z. Domagala, J Adamczewska, V.V. Preobrazhenskii STRESS INDUCED TRANSFORMATION IN PHOTOLUMINESCENCE SPECTRA OF HOMOEPITAXIAL BERYLLIUM - DOPED GaAs THIN FILMS
Takao Wada and Hiroshi Fujimoto IDENTIFICATION of SUPERDIFFUSION of IMPURITY ATOMS in DAMAGE-FREE REGIONS of SEMICONDUCTORS
Takao Wada and Hiroshi Fujimoto ELECTRON BEAM DOPING of IMPURITY ATOMS into SEMICONDUCTORS by SUPERDIFFUSION
V.P. Markevich, V.V. Litvinov, L. Dobaczewski, L.J. Lindström, L.I. Murine, and A.R.Peaker RADIATION-INDUCED DEFECTS and THEIR TRANSFORMATIONS in OXYGEN-RICH GERMANIUM CRYSTALS
W. Gehlhoff , D. Azamat, A. Hoffman, and N. Dietz DONOR CENTRES in ZINC GERMANIUM DIPHOSPHIDE PRODUCED by ELECTRON IRRADIATION
Yong-Sung Kim and K. J. Chang NITROGEN-HYDROGEN COMPLEXES in GaAs and GaAs1-xNx ALLOYS